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BSS138LT1G Onsemi Mosfet Trans N CH 50V 0.2A 3 Pin SOT-23 T/R

BSS138LT1G Onsemi Mosfet Trans N CH 50V 0.2A 3 Pin SOT-23 T/R

BSS138LT1G Onsemi Mosfet Trans N CH 50V 0.2A 3 Pin SOT-23 T/R
BSS138LT1G Onsemi Mosfet Trans N CH 50V 0.2A 3 Pin SOT-23 T/R

Large Image :  BSS138LT1G Onsemi Mosfet Trans N CH 50V 0.2A 3 Pin SOT-23 T/R Get Best Price

Product Details:
Place of Origin: China
Brand Name: ONSEMI
Model Number: BSS138LT1G
Payment & Shipping Terms:
Minimum Order Quantity: package qty
Price: contact sales for updated price
Packaging Details: tape and reel
Delivery Time: 2 weeks
Payment Terms: T/T
Supply Ability: 1000+
Detailed Product Description
Highlight:

Onsemi Mosfet 50V 0.2A

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Onsemi Mosfet Trans N CH

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BSS138LT1G 3 Pin

BSS138LT1G ONsemi Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R

The ON Semiconductor MOSFET is an N channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C.

Features and Benefits:
• Low Threshold Voltage (VGS(th): 0.85 V-1.5 V) Makes it Ideal for Low Voltage Applications
• Miniature SOT-23 Surface Mount Package Saves Board Space
• BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Application:
• DC-DC converters
• Power management in portable and battery-powered products such as computers
• Printers
• PCMCIA cards
• Cellular and cordless telephones.

Product Technical Specifications

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.21.00.95
Automotive No
PPAP No
Product Category Power MOSFET
Configuration Single
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 50
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 1.5
Operating Junction Temperature (°C) -55 to 150
Maximum Continuous Drain Current (A) 0.2
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 0.5
Maximum Drain Source Resistance (MOhm) 3500@5V
Typical Input Capacitance @ Vds (pF) 40@25V
Typical Reverse Transfer Capacitance @ Vds (pF) 3.5
Minimum Gate Threshold Voltage (V) 0.85
Typical Output Capacitance (pF) 12
Maximum Power Dissipation (mW) 225
Typical Turn-Off Delay Time (ns) 20(Max)
Typical Turn-On Delay Time (ns) 20(Max)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Maximum Positive Gate Source Voltage (V) 20
Maximum Pulsed Drain Current @ TC=25°C (A) 0.8
Typical Gate Plateau Voltage (V) 1.9
Pin Count 3
Standard Package Name SOT
Supplier Package SOT-23
Mounting Surface Mount
Package Height 0.94
Package Length 2.9
Package Width 1.3
PCB changed 3
Lead Shape Gull-wing
Amplify electronic signals and switch between them with the help of ON Semiconductor's BSS138LT1G power MOSFET. Its maximum power dissipation is 225 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology. This N channel MOSFET transistor operates in enhancement mode.

Contact Details
Sunbeam Electronics (Hong Kong) Limited

Contact Person: peter

Tel: +8613211027073

Send your inquiry directly to us